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 Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION With TO-220C package Complement to type BD895/897/899/901 DARLINGTON APPLICATIONS For use in output stages in audio equipment, general amplifier,and analogue switching applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
BD896/898/900/902
Absolute maximum ratings(Ta=25ae )
SYMBOL

PARAMETER
CONDITIONS
BD896 BD898 BD900
VCBO
Collector-base voltage
INCH
VCEO VEBO IC IB PT Tj Tstg
GE S AN
BD902 BD896 BD898 BD900 BD902
Open emitter
EMIC
OND
TOR UC
VALUE -45 -60 -80 -100 -45 -60
UNIT
V
Collector-emitter voltage
Open base -80 -100 Open collector -5 -8 -300 TC=25ae 70
V
Emitter-base voltage Collector current-DC Base current Total power dissipation
V A mA W
Ta=25ae Junction temperature Storage temperature
2 150 -65~150 ae ae
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER BD896 BD898 IC=-100mA, IB=0 BD900 BD902 VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage BD896 BD898 ICBO Collector cut-off current BD900 IC=-3A ,IB=-12mA IC=-3A ; VCE=-3V VCB=-45V, IE=0 TC=100ae VCB=-60V, IE=0 TC=100ae VCB=-80V, IE=0 TC=100ae VCB=-100V, IE=0 TC=100ae VCE=-30V, IB=0 VCE=-30V, IB=0 VCE=-40V, IB=0 VCE=-50V, IB=0 VEB=-5V; IC=0 IC=-3A ; VCE=-3V IE=-8A IC=-3A ; IB1=-IB2=-12mA VBE=3.5V;RL=10| ;tp=20|I CONDITIONS
BD896/898/900/902
SYMBOL
MIN -45 -60
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
V -80 -100 -2.5 -2.5 -0.2 -2.0 -0.2 -2.0 -0.2 -2.0 V V
mA
ICEO IEBO hFE VEC ton toff

BD902
BD896 BD898
Collector cut-off current
Emitter cut-off current DC current gain
IN
ANG CH
BD900
BD902
SEM E
OND IC
TOR UC
-0.5 mA -2 mA
-0.2 -2.0
750 -3.5 1 s 5 |I |I V s s
Diode forward voltage Turn-on time Turn-off time
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.79 UNIT ae /W
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
BD896/898/900/902
SEM GE
HAN INC
OND IC
TOR UC
Fig.2 Outline dimensions
3


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